1 edition 1.4 october 2004 FLX257XV gaas fet & hemt chips item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency output power at 1db gain compression point power gain at 1db gain compression point symbol i dss - 1000 1500 - 600 - -1.0 -2.0 -3.5 -5 -- 6.5 7.5 - -31 - 32.5 33.5 - v ds = 5v, i ds = 50ma v ds = 5v, i ds = 600ma v ds = 5v, v gs = 0v i gs = -50 a v ds = 10v i ds 0.6i dss f = 10ghz ma ms v db % dbm v g m v p v gso p 1db g 1db add thermal resistance -810 r th test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) note: rf parameter sample size 10pcs. criteria (accept/reject)=(2/3) channel to case c/w the chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. description the FLX257XV chip is a power gaas fet that is designed for general purpose applications in the x-band frequency range as it provides superior power, gain, and efficiency. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. 95 40 (unit: m) 40 56 drain drain drain drain gate gate gate item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 15.0 -65 to +175 175 t c = 25 c v v w c c p tot t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) eudyna recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 17.8 and -1.2 ma respectively with gate resistance of 200 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. features high output power: p 1db = 33.5dbm(typ.) high gain: g 1db = 7.5db(typ.) high pae: add = 31%(typ.) proven reliability
2 FLX257XV gaas fet & hemt chips power derating curve drain current vs. drain-source voltage 8 4 16 12 0 50 100 150 200 24 6810 case temperature ( c) drain-source voltage (v) total power dissipation (w) 31 33 35 29 27 25 23 17 19 21 23 25 27 input power (dbm) output power (dbm) 1000 750 500 250 drain current (ma) v gs =0v -0.5v -1.5v -2.0v -1.0v output power vs. input power v ds =10v i ds 0.6i dss f = 10ghz add p out 40 30 20 10 add (%)
3 s-parameters v ds = 10v, i ds = 600ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 .995 -35.2 14.385 161.0 .007 72.1 .390 -171.2 500 .963 -115.7 7.909 117.0 .020 32.2 .516 -168.2 1000 .953 -145.3 4.423 98.0 .022 18.4 .552 -170.1 2000 .951 -162.8 2.259 80.7 .022 11.8 .579 -169.1 3000 .951 -169.0 1.487 69.1 .022 11.3 .607 -167.1 4000 .953 -172.4 1.089 59.4 .021 13.3 .638 -165.5 5000 .955 -174.6 .846 50.6 .020 16.9 .671 -164.6 6000 .957 -176.3 .681 42.7 .019 22.1 .704 -164.2 7000 .959 -177.6 .562 35.5 .019 28.3 .735 -164.2 8000 .961 -178.8 .472 28.9 .019 35.2 .763 -164.5 9000 .963 -179.8 .402 22.9 .020 42.0 .789 -165.0 10000 .964 179.3 .345 17.5 .021 48.3 .811 -165.7 11000 .966 178.4 .300 12.6 .023 53.8 .831 -166.4 12000 .967 177.6 .262 8.3 .025 58.4 .849 -167.2 13000 .968 176.8 .230 4.4 .027 62.1 .864 -168.0 14000 .969 176.1 .202 1.0 .029 65.1 .878 -168.8 15000 .970 175.4 .179 -1.9 .032 67.5 .889 -169.6 16000 .971 174.7 .158 -4.4 .034 69.3 .900 -170.3 17000 .972 174.0 .140 -6.4 .037 70.8 .909 -171.0 18000 .972 173.3 .124 -7.8 .039 72.0 .916 -171.7 note:* the data includes bonding wires. n: number of wires gate n=8 (0.2mm length, 25m dia au wire) drain n=8 (0.2mm length, 25m dia au wire) FLX257XV gaas fet & hemt chips
4 chip outline source electrodes are connected to the phs by via-hole via-hole die thickness: 60 20 m 95 40 480 30 1770 30 (unit: m) 40 56 44 60 drain drain drain drain gate gate gate 70 60 44 (unit: m) 106 60 106 128 FLX257XV gaas fet & hemt chips eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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